advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -30v simple drive requirement r ds(on) 9m fast switching characteristic i d -75a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice parameter total power dissipation operating junction temperature range storage temperature range linear derating factor -55 to 150 thermal data parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v 3 continuous drain current, v gs @ 10v -50 pulsed drain current 1 -300 ap6679gh/j-hf rating -30 200812304 halogen-free product 1 + 20 -75 0.71 89 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 4 g d s g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap6679gj) is available for low-profile applications. free datasheet http:///
ap6679gh/j-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 9 m ? ? free datasheet http:///
ap6679gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 7 9 11 13 15 357911 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -24a t c =25 : 0 40 80 120 160 200 240 280 0 0.5 1 1.5 2 2.5 3 3.5 4 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -6.0v -4.5v v g =-3.0v 0.6 1 1.4 1.8 2.2 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -30a v g = -10v 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -6.0v -4.5v v g =-3.0v free datasheet http:///
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap6679gh/j-hf 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 1 2 3 4 5 6 7 0 102030405060 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -16a v ds = -24v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t c =25 o c single pulse free datasheet http:///
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 6679gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product logo meet rohs requirement for low voltage mosfet only e3 5 free datasheet http:///
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-251 symbols advanced power electronics corp. millimeters 6679gj ywwsss part numbe r package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product logo meet rohs requirement for low voltage mosfet only 6 free datasheet http:///
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